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CY7C164 CY7C166
16K x 4 Static RAM
Features
* High speed -- 15 ns * Output enable (OE) feature (CY7C166) * CMOS for optimum speed/power * Low active power -- 633 mW * Low standby power -- 110 mW * TTL-compatible inputs and outputs * Automatic power-down when deselected three-state drivers. The CY7C166 has an active LOW Output Enable (OE) feature. Both devices have an automatic powerdown feature, reducing the power consumption by 65% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW (and the Output Enable (OE) is LOW for the CY7C166). Data on the four input/output pins (I/O0 through I/O3) is written into the memory location specified on the address pins (A0 through A13). Reading the device is accomplished by taking Chip Enable (CE) LOW (and OE LOW for CY7C166), while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data I/O pins. The I/O pins stay in a high-impedance state when Chip Enable (CE) is HIGH (or Output Enable (OE) is HIGH for CY7C166). A die coat is used to insure alpha immunity.
Functional Description
The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and
Logic Block Diagram
Pin Configurations
DIP Top View
A5 A6 A7 A8 A9 A10 A11 A12 A13 CE GND 1 2 3 4 5 6 7C164 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 VCC A4 A3 A2 A1 A0 I/O3 I/O2 I/O1 I/O0 WE C164-3 A5 A6 A7 A8 A9 A10 A11 A12 A13 CE NC GND
SOJ Top View
1 2 3 4 5 6 7C164 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A4 A3 A2 A1 A0 NC I/O3 I/O2 I/O1 I/O0 WE C164-2
INPUT BUFFER A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER I/O3 I/O2 I/O1 I/O0
SENSE AMPS
256 x 64 x 4 ARRAY
DIP/SOJ Top View
A5 A6 A7 A8 A9 A10 A11 A12 A13 CE OE GND 1 24 2 23 3 22 4 21 5 20 6 7C166 19 7 18 17 8 9 16 10 15 11 14 13 12 VCC A4 A3 A2 A1 A0 NC I/O3 I/O2 I/O1 I/O0 WE C166-1
COLUMN DECODER A0 A9 A10 A11 A12 A13
POWER DOWN
CE WE (OE) (7C166 ONLY)
C164-4
]
Selection Guide
7C164-15 7C166-15 Maximum Access Time (ns) Maximum Operating Current (mA) Maximum Standby Current (mA) 15 115 20 7C164-20 7C166-20 20 115 20 7C164-25 7C166-25 25 105 20 7C164-35 7C166-35 35 105 20
Cypress Semiconductor Corporation Document #: 38-05025 Rev. **
*
3901 North First Street
*
San Jose
*
CA 95134 * 408-943-2600 Revised August 24, 2001
CY7C164 CY7C166
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage to Ground Potential ............... -0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ............................................ -0.5V to +7.0V DC Input Voltage
[1]
Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA
Operating Range
Range Commercial Ambient Temperature 0C to +70C VCC 5V 10%
........................................ -0.5V to +7.0V
Electrical Characteristics Over the Operating Range
7C164-15 7C166-15 Parameter VOH VOL VIH VIL IIX IOZ IOS ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Load Current Output Leakage Current Output Short Circuit Current[2] VCC Operating Supply Current Automatic CE Power-Down Current[3] Automatic CE Power-Down Current[3] GND < VI < VCC GND < VO < VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA Max. VCC, CE > VIH, Min. Duty Cycle = 100% Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.5 -5 -5 Min. 2.4 0.4 VCC 0.8 +5 +5 -350 115 40 20 2.2 -0.5 -5 -5 Max. 7C164-20 7C166-20 Min. 2.4 0.4 VCC 0.8 +5 +5 -350 115 40 20 2.2 -0.5 -5 -5 Max. 7C164-25, 35 7C166-25, 35 Min. 2.4 0.4 VCC 0.8 +5 +5 -350 105 20 20 Max. Unit V V V V A A mA mA mA mA
Capacitance[4]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 10 10 Unit pF pF
Notes: 1. Minimum voltage is equal to -3.0V for pulse durations less than 30 ns. 2. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given. 4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
AC Test Loads and Waveforms
5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) Equivalent to: R2 255 R1 481 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE (b) R2 255
C164-5
R1 481 ALL INPUT PULSES 3.0V GND 10% 90% 90% 10% < 5 ns
C164-6
< 5 ns
THEVENIN EQUIVALENT 167 OUTPUT 1.73V
Switching Characteristics Over the Operating Range[5]
7C164-15 7C166-15 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Read Cycle Time Address to Data Valid Output Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High Z CE LOW to Low Z
[6]
7C164-20 7C166-20 Min. 20 Max.
7C164-25 7C166-25 Min. 25 Max.
7C164-35 7C166-35 Min. 35 Max. Unit ns 35 5 35 15 3 12 5 15 0 20 25 25 25 0 0 20 15 0 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10 ns
Description
Min. 15
Max.
15 3 15 7C166 7C166 7C166 3 8 0 15 15 12 12 0 0 12 10 0 5 7 20 15 15 0 0 15 10 0 5 0 3 8 5 10 3 5
20 5 20 10 3 8 5 8 0 20 20 20 20 0 0 15 10 0 5 7
25 25 12 10 10 20
CE HIGH to High Z[6, 7] CE LOW to Power-Up CE HIGH to Power-Down
[8]
WRITE CYCLE
Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z
[6]
WE LOW to High Z[6, 7]
7
Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE for any given device. These parameters are guaranteed by design and not 100% tested. 7. tHZCE and tHZWE are specified with CL = 5 pF as in part (b) in AC Test Loads. Transition is measured 500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
Switching Waveforms
Read Cycle No.1
[9, 10]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
C164-7
Read Cycle No. 2 [9, 11]
CE tACE OE 7C166 tDOE tLZOE HIGH IMPEDANCE tLZCE V CC SUPPLY CURRENT tPU 50% tPD ICC 50% ISB
C164-8
tRC
tHZOE tHZCE DATA VALID
HIGH IMPEDANCE
DATA OUT
Write Cycle No. 1 (WE Controlled) [8, 12]
tWC ADDRESS tSCE CE tSA WE tSD DATA IN DATAINVALID tHZWE DATA I/O DATA UNDEFINED
C164-9
tAW tPWE
tHA
tHD
tLZWE HIGH IMPEDANCE
Notes: 9. WE is HIGH for read cycle. 10. Device is continuously selected, CE = VIL. (CY7C166: OE = VIL also). 11. Address valid prior to or coincident with CE transition LOW. 12. CY7C166 only: Data I/O will be high-impedance if OE = VIH.
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
Switching Waveforms (continued)
Write Cycle No. 2 (CE Controlled) [8, 12, 13]
tWC ADDRESS tSA CE tAW tPWE WE tSD DATA IN DATAIN VALID tHD tHA tSCE
DATA I/O
HIGH IMPEDANCE
C164-10
Note: 13. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
Typical DC and AC Characteristics
OUTPUT SOURCE CURRENT (mA) NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4
SB
NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.2
SB
OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 V CC = 5.0V TA = 25C
1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.0 4.5 5.0 I SB 5.5 6.0 I CC
1.0 0.8 0.6 0.4 0.2 0.0 -55 ISB 25
NORMALIZED I, I CC
NORMALIZED I, I CC
I CC
V CC = 5.0V V IN = 5.0V
125
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (C)
OUTPUT VOLTAGE (V)
OUTPUT SINK CURRENT (mA)
NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 NORMALIZED tAA NORMALIZED t AA 1.3 1.2 1.1 TA = 25C 1.0 0.9 0.8 4.0 4.5 5.0 5.5 6.0 1.6 1.4 1.2 1.0
NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE
OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 140 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 VCC = 5.0V TA =25C
VCC =5.0V 0.8 0.6 -55
25
125
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (C)
OUTPUT VOLTAGE (V)
TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 3.0 NORMALIZED I PO 2.5 DELTA tAA (ns) 2.0 1.5 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 30.0
TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.25 NORMALIZED I CC
NORMALIZED I CC vs. CYCLE TIME VCC = 5.0V TA = 25C VIN = 0.5V 1.00
25.0 20.0 15.0 10.0 5.0 0.0 0 200 400 VCC = 4.5V TA = 25C
0.75
600
800 1000
0.50 10
20
30
40
SUPPLY VOLTAGE (V)
CAPACITANCE (pF)
CYCLE FREQUENCY (MHz)
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
CY7C164 Truth Table
CE H L L WE X H L Input/Output High Z Data Out Data In Read Write Mode Deselect/Power-Down
Address Designators
Address Name A5 A6 A7 A8 A9 Mode Deselect/Power-Down Read Write Write A10 A11 A12 A13 A0 A1 A2 A3 A4 Address Function X3 X4 X5 X6 X7 Y5 Y4 Y0 Y1 Y2 Y3 X0 X1 X2 CY 7C164 Pin CY7C166 Pin Number Number 1 2 3 4 5 6 7 8 9 17 18 19 20 21 1 2 3 4 5 6 7 8 9 19 20 21 22 23
CY7C166 Truth Table
CE H L L L WE X H L H OE X L H H Input/Output High Z Data Out Data In High Z
Ordering Information
Speed (ns) 15 20 25 35 Ordering Code CY7C164-15PC CY7C164-15VC CY7C164-20PC CY7C164-20VC CY7C164-25PC CY7C164-25VC CY7C164-35PC CY7C164-35VC Package Name P9 V13 P9 V13 P9 V13 P9 V13 Package Type 22-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 22-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 22-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 22-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ Commercial Commercial Commercial Operating Range Commercial
Speed (ns) 15 20 25 35
Ordering Code CY7C166-15PC CY7C166-15VC CY7C166-20PC CY7C166-20VC CY7C166-25PC CY7C166-25VC CY7C166-35PC CY7C166-35VC
Package Name P13 V13 P13 V13 P13 V13 P13 V13
Package Type 24-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 24-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 24-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ 24-Lead (300-Mil) Molded DIP 24-Lead Molded SOJ
Operating Range Commercial Commercial Commercial Commercial
Document #: 38-05025 Rev. **
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CY7C164 CY7C166
Package Diagrams
22-Lead (300-Mil) Molded DIP P9
51-85012-A
24-Lead (300-Mil) Molded DIP P13/P13A
51-85013-A
24-Lead (300-Mil) Molded SOJ V13
51-85030-A
Document #: 38-05025 Rev. **
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(c) Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C164 CY7C166
Document Title: CY7C164, CY7C166 16K x 4 Static RAM Document Number: 38-05025 REV. ** ECN NO. 106811 Issue Date 09/10/01 Orig. of Change SZV Description of Change Change from Spec number: 38-00032 to 38-05025
Document #: 38-05025 Rev. **
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